NE663M04-A
RF TRANS NPN 3.3V 15GHZ SOT343FManufacturer: CEL
Categories: Bipolar RF Transistors
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CEL NE663M04-A is an NPN bipolar RF transistor designed for high-frequency applications. This component features a 3.3V collector-emitter breakdown voltage and a maximum collector current of 100mA. With a transition frequency of 15GHz and a typical gain of 14dB, it is suitable for demanding RF circuitry. The noise figure is rated at a typical 1.2dB at 2GHz, ensuring low signal degradation. This surface mount device is housed in a SOT-343F package, allowing for compact board layouts. The NE663M04-A operates at a maximum power dissipation of 190mW and has a minimum DC current gain (hFE) of 50 at 10mA and 2V. Its operating temperature range extends up to 150°C. This transistor is utilized in various communication systems and high-frequency signal processing applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SOT-343F |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 14dB |
| Power - Max | 190mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 3.3V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA, 2V |
| Frequency - Transition | 15GHz |
| Noise Figure (dB Typ @ f) | 1.2dB @ 2GHz |
| Supplier Device Package | SOT-343F |
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