NE662M04-T2-A
SAME AS 2SC5508 NPN SILICON AMPLManufacturer: CEL
Categories: Bipolar RF Transistors
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CEL NE662M04-T2-A is an NPN Silicon RF Transistor designed for high-frequency applications. Featuring a transition frequency of 25GHz and a typical gain of 17dB, this component is well-suited for demanding RF amplification stages. The device operates at a collector-emitter breakdown voltage of 3.3V with a maximum collector current of 35mA. Its low noise figure of 1.1dB at 2GHz makes it ideal for sensitive receiver front-ends. The transistor is housed in a compact SOT-343F (M04) surface mount package and is supplied on a tape and reel. This component finds application in wireless communication systems, satellite communications, and other high-frequency electronic designs requiring efficient RF signal amplification. The operating junction temperature range extends to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-343F |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 17dB |
| Power - Max | 115mW |
| Current - Collector (Ic) (Max) | 35mA |
| Voltage - Collector Emitter Breakdown (Max) | 3.3V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 5mA, 2V |
| Frequency - Transition | 25GHz |
| Noise Figure (dB Typ @ f) | 1.1dB @ 2GHz |
| Supplier Device Package | M04 |
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