NE662M04-A
RF TRANS NPN 3.3V 25GHZ SOT343FManufacturer: CEL
Categories: Bipolar RF Transistors
Quality Control: Learn More
The CEL NE662M04-A is an NPN bipolar RF transistor designed for high-frequency applications. This device operates with a collector-emitter breakdown voltage of 3.3V and a maximum collector current of 35mA. It exhibits a high transition frequency of 25GHz, enabling operation in demanding RF systems. The NE662M04-A provides a typical gain of 18dB and a noise figure of 1.1dB at 2GHz, making it suitable for low-noise amplification. With a maximum power dissipation of 115mW and an operating junction temperature up to 150°C, it is engineered for reliability. The transistor is housed in a SOT-343F surface mount package. This component finds application in wireless communications infrastructure, satellite communications, and radar systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SOT-343F |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 18dB |
| Power - Max | 115mW |
| Current - Collector (Ic) (Max) | 35mA |
| Voltage - Collector Emitter Breakdown (Max) | 3.3V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 5mA, 2V |
| Frequency - Transition | 25GHz |
| Noise Figure (dB Typ @ f) | 1.1dB @ 2GHz |
| Supplier Device Package | SOT-343F |
Request a Quote
Clients Also Buy
NE85633-R24-A
RF TRANS NPN 12V 7GHZ SOT23
NE68130-T1-A
RF TRANS NPN 10V 7GHZ SOT323
NE67818-A
RF TRANS NPN 6V 12GHZ SOT343
