NE66219-T1-A
RF TRANS NPN 3.3V 21GHZ SOT523Manufacturer: CEL
Categories: Bipolar RF Transistors
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CEL NPN RF Transistor, part number NE66219-T1-A, is a high-performance component designed for demanding RF applications. This surface-mount device, housed in a SOT-523 package, operates with a 3.3V collector-emitter breakdown voltage and a maximum collector current of 35mA. It offers a transition frequency of 21GHz and a typical gain of 14dB. The NE66219-T1-A exhibits a low noise figure of 1.2dB at 2GHz, making it suitable for sensitive receiver front-ends. With a maximum power dissipation of 115mW and an operating junction temperature of 150°C, this transistor is engineered for reliability in applications such as wireless communications infrastructure, satellite communications, and radar systems. It is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-523 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 14dB |
| Power - Max | 115mW |
| Current - Collector (Ic) (Max) | 35mA |
| Voltage - Collector Emitter Breakdown (Max) | 3.3V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 2V |
| Frequency - Transition | 21GHz |
| Noise Figure (dB Typ @ f) | 1.2dB @ 2GHz |
| Supplier Device Package | SOT-523 |
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