NE66219-A
RF TRANS NPN 3.3V 21GHZ SOT523Manufacturer: CEL
Categories: Bipolar RF Transistors
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CEL NE66219-A is an NPN bipolar RF transistor designed for high-frequency applications. This component features a transition frequency of 21GHz and a maximum collector current of 35mA. It delivers a typical gain of 14dB at 2GHz with a low noise figure of 1.2dB at the same frequency. The device operates with a collector-emitter breakdown voltage of 3.3V and a maximum power dissipation of 115mW. With a minimum DC current gain (hFE) of 60 at 5mA and 2V, the NE66219-A is housed in a compact SOT-523 surface mount package. This transistor is suitable for use in various wireless communication systems, including cellular infrastructure and satellite communications, operating at temperatures up to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SOT-523 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 14dB |
| Power - Max | 115mW |
| Current - Collector (Ic) (Max) | 35mA |
| Voltage - Collector Emitter Breakdown (Max) | 3.3V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 2V |
| Frequency - Transition | 21GHz |
| Noise Figure (dB Typ @ f) | 1.2dB @ 2GHz |
| Supplier Device Package | SOT-523 |
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