NE58219-T1-A
TRANSISTOR BIPOLAR .9GHZ 3-SMINIManufacturer: CEL
Categories: Bipolar RF Transistors
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CEL NE58219-T1-A is an NPN bipolar RF transistor designed for high-frequency applications. This device features a collector-emitter breakdown voltage of 12V and a maximum collector current of 60mA. With a transition frequency of 5GHz and a maximum power dissipation of 100mW, it is suitable for RF amplification and switching circuits. The transistor exhibits a minimum DC current gain (hFE) of 60 at 5mA collector current and 5V collector-emitter voltage. It is supplied in a 3-SuperMiniMold (19) package, also identified as SC-75 or SOT-416, for surface mounting. This component is commonly utilized in wireless communication systems, satellite communications, and other high-frequency electronic equipment. It is provided in cut tape packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Gain | - |
| Power - Max | 100mW |
| Current - Collector (Ic) (Max) | 60mA |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 5V |
| Frequency - Transition | 5GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | 3-SuperMiniMold (19) |
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