NE462M02-T1-AZ
RF TRANS NPN 12V 6GHZ SOT89Manufacturer: CEL
Categories: Bipolar RF Transistors
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CEL NE462M02-T1-AZ is an NPN bipolar RF transistor designed for high-frequency applications. This surface-mount component operates with a collector-emitter breakdown voltage of 12V and a maximum collector current of 150mA. It achieves a transition frequency of 6GHz and offers a typical gain of 10dB. The transistor exhibits a minimum DC current gain (hFE) of 50 at 50mA and 5V. With a maximum power dissipation of 1.8W and a noise figure of 3.5dB at 1GHz, the NE462M02-T1-AZ is suitable for demanding RF circuits. Its operating junction temperature range extends to 150°C. The component is supplied in a TO-243AA package, presented on tape and reel. This device finds application in telecommunications and wireless infrastructure.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 10dB |
| Power - Max | 1.8W |
| Current - Collector (Ic) (Max) | 150mA |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 50mA, 5V |
| Frequency - Transition | 6GHz |
| Noise Figure (dB Typ @ f) | 3.5dB @ 1GHz |
| Supplier Device Package | - |
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