NE202930-A
RF TRANS NPN 6V 11GHZ 3SMINMOLDManufacturer: CEL
Categories: Bipolar RF Transistors
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CEL NE202930-A is an NPN bipolar RF transistor designed for high-frequency applications. This surface-mount device operates at up to 11GHz, with a collector current (Ic) maximum of 100mA and a collector-emitter breakdown voltage of 6V. It delivers a typical gain of 13.5dB and a low noise figure of 1.15dB at 1GHz. The transistor is housed in a 3-SuperMiniMold package, suitable for demanding environments with an operating junction temperature up to 150°C. With a maximum power dissipation of 150mW and a minimum DC current gain (hFE) of 85 at 5mA and 5V, the NE202930-A is well-suited for use in wireless infrastructure, satellite communications, and other microwave frequency systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 13.5dB |
| Power - Max | 150mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 6V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 85 @ 5mA, 5V |
| Frequency - Transition | 11GHz |
| Noise Figure (dB Typ @ f) | 1.15dB @ 1GHz |
| Supplier Device Package | 3-SuperMiniMold (30 PKG) |
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