CGD65B240SH2
650V GAN HEMT, 240MOHM, DFN5X6.Manufacturer: Cambridge GaN Devices
Categories: Single FETs, MOSFETs
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Cambridge GaN Devices ICeGaN™ CGD65B240SH2 is a 650V Gallium Nitride Field-Effect Transistor (GaNFET) designed for high-efficiency power conversion applications. This N-channel device features a low on-resistance of 336mOhm maximum at 500mA and 12V drive. With a continuous drain current (Id) of 7A at 25°C and a drain-to-source voltage (Vdss) of 650V, it is suitable for demanding power management tasks. The device is housed in an 8-DFN (5x6) surface mount package, supplied on tape and reel. Key parameters include a gate charge (Qg) of 1.2 nC maximum at 12V, and a threshold voltage (Vgs(th)) of 4.2V maximum at 2.3mA. This component finds application in sectors such as consumer electronics, industrial power supplies, and electric vehicle charging infrastructure.
Additional Information
Series: ICeGaN™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A |
| Rds On (Max) @ Id, Vgs | 336mOhm @ 500mA, 12V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 4.2V @ 2.3mA |
| Supplier Device Package | 8-DFN (5x6) |
| Grade | - |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Vgs (Max) | +20V, -1V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.2 nC @ 12 V |
| Qualification | - |
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