CGD65B200S2-T13
650V GAN HEMT, 200MOHM, DFN5X6.Manufacturer: Cambridge GaN Devices
Categories: Single FETs, MOSFETs
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Cambridge GaN Devices ICeGaN™ CGD65B200S2-T13 is a 650 V Gallium Nitride Field-Effect Transistor (GaNFET) with a low on-resistance of 280mOhm @ 600mA, 12V. This device features integrated current sensing capabilities, making it suitable for demanding applications in power supply units, motor drivers, and industrial power conversion. The CGD65B200S2-T13 utilizes an 8-DFN (5x6) surface mount package and operates with a continuous drain current of 8.5A (Tc) at 25°C. Key electrical parameters include a gate charge of 1.4 nC @ 12 V and a drain-to-source voltage (Vdss) of 650 V. The device is supplied on tape and reel.
Additional Information
Series: ICeGaN™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | - |
| Current - Continuous Drain (Id) @ 25°C | 8.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 600mA, 12V |
| FET Feature | Current Sensing |
| Vgs(th) (Max) @ Id | 4.2V @ 2.75mA |
| Supplier Device Package | 8-DFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 9V, 20V |
| Vgs (Max) | +20V, -1V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.4 nC @ 12 V |
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