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CGD65B200S2-T13

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CGD65B200S2-T13

650V GAN HEMT, 200MOHM, DFN5X6.

Manufacturer: Cambridge GaN Devices

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Cambridge GaN Devices ICeGaN™ CGD65B200S2-T13 is a 650 V Gallium Nitride Field-Effect Transistor (GaNFET) with a low on-resistance of 280mOhm @ 600mA, 12V. This device features integrated current sensing capabilities, making it suitable for demanding applications in power supply units, motor drivers, and industrial power conversion. The CGD65B200S2-T13 utilizes an 8-DFN (5x6) surface mount package and operates with a continuous drain current of 8.5A (Tc) at 25°C. Key electrical parameters include a gate charge of 1.4 nC @ 12 V and a drain-to-source voltage (Vdss) of 650 V. The device is supplied on tape and reel.

Additional Information

Series: ICeGaN™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: UnknownPackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyGaNFET (Gallium Nitride)
FET Type-
Current - Continuous Drain (Id) @ 25°C8.5A (Tc)
Rds On (Max) @ Id, Vgs280mOhm @ 600mA, 12V
FET FeatureCurrent Sensing
Vgs(th) (Max) @ Id4.2V @ 2.75mA
Supplier Device Package8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On)9V, 20V
Vgs (Max)+20V, -1V
Drain to Source Voltage (Vdss)650 V
Gate Charge (Qg) (Max) @ Vgs1.4 nC @ 12 V

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