CGD65B130SH2
650V GAN HEMT, 130MOHM, DFN5X6.Manufacturer: Cambridge GaN Devices
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Cambridge GaN Devices CGD65B130SH2 is a 650 V N-Channel GaNFET from the ICeGaN™ series. This component offers a low on-resistance of 182 mOhm maximum at 900 mA and 12 V, with a continuous drain current of 12 A at 25°C. The device features a gate charge of 1.9 nC maximum at 12 V. Packaged in an 8-DFN (5x6) surface mount configuration, it operates across a temperature range of -55°C to 150°C. Ideal for applications requiring high efficiency and power density, this GaNFET is utilized in power supply units, motor drives, and renewable energy systems.
Additional Information
Series: ICeGaN™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A |
| Rds On (Max) @ Id, Vgs | 182mOhm @ 900mA, 12V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 4.2V @ 4.2mA |
| Supplier Device Package | 8-DFN (5x6) |
| Grade | - |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Vgs (Max) | +20V, -1V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.9 nC @ 12 V |
| Qualification | - |
Request a Quote
Clients Also Buy
CGD65B200S2-T13
650V GAN HEMT, 200MOHM, DFN5X6.
CGD65B130S2-T13
650V GAN HEMT, 130MOHM, DFN5X6.
CGD65A130S2-T13
650V GAN HEMT, 130MOHM, DFN8X8.
