CGD65B130S2-T13
650V GAN HEMT, 130MOHM, DFN5X6.Manufacturer: Cambridge GaN Devices
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Cambridge GaN Devices ICeGaN™ CGD65B130S2-T13 is a 650V Gallium Nitride High Electron Mobility Transistor (HEMT) with a 182mOhm maximum Rds On at 900mA and 12V. This surface mount device features a 12A continuous drain current (Tc) and is housed in an 8-DFN (5x6) package. Key parameters include a Vgs(th) of 4.2V at 4.2mA and a gate charge of 2.3 nC at 12V. The device supports drive voltages from 9V to 20V and incorporates current sensing capabilities. Operating temperature range is -55°C to 150°C (TJ). This GaNFET is suitable for applications in power conversion, including server power supplies, industrial power systems, and electric vehicle charging infrastructure.
Additional Information
Series: ICeGaN™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | - |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 182mOhm @ 900mA, 12V |
| FET Feature | Current Sensing |
| Vgs(th) (Max) @ Id | 4.2V @ 4.2mA |
| Supplier Device Package | 8-DFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 9V, 20V |
| Vgs (Max) | +20V, -1V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 2.3 nC @ 12 V |
Request a Quote
Clients Also Buy
CGD65B200S2-T13
650V GAN HEMT, 200MOHM, DFN5X6.
CGD65A130S2-T13
650V GAN HEMT, 130MOHM, DFN8X8.
CGD65A055S2-T07
650V GAN HEMT, 55MOHM, DFN8X8. W
