CGD65A130S2-T13
650V GAN HEMT, 130MOHM, DFN8X8.Manufacturer: Cambridge GaN Devices
Categories: Single FETs, MOSFETs
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Cambridge GaN Devices CGD65A130S2-T13 is a 650V GaNFET (Gallium Nitride) in the ICeGaN™ series. This surface mount component features a 130mOhm Rds(on) at 900mA and 12V, with a continuous drain current capability of 12A (Tc). The device utilizes a 16-DFN (8x8) package and offers integrated current sensing functionality. Key parameters include a Vgs(th) of 4.2V at 4.2mA and a maximum gate charge (Qg) of 2.3 nC at 12V. The operating temperature range is -55°C to 150°C (TJ). This component is suitable for applications in power conversion, such as server power supplies, industrial power systems, and electric vehicle charging.
Additional Information
Series: ICeGaN™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 16-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | - |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 182mOhm @ 900mA, 12V |
| FET Feature | Current Sensing |
| Vgs(th) (Max) @ Id | 4.2V @ 4.2mA |
| Supplier Device Package | 16-DFN (8x8) |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Vgs (Max) | +20V, -1V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 2.3 nC @ 12 V |
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