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CGD65A055SH2

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CGD65A055SH2

650V GAN HEMT, 55MOHM, DFN8X8. W

Manufacturer: Cambridge GaN Devices

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Cambridge GaN Devices ICeGaN™ H2 series CGD65A055SH2 is a 650V P-Channel Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) with a drain-source on-resistance (Rds(on)) of 77mOhm at 2.2A and 12V Vgs. This device features a continuous drain current (Id) of 27A at 25°C and a gate charge (Qg) of 4nC at 12V Vgs. The CGD65A055SH2 is housed in a 16-DFN (8x8) package, designed for surface mounting. Its operating temperature range is -55°C to 150°C. This component is suitable for applications in power conversion, motor drives, and industrial power supplies.

Additional Information

Series: ICeGaN™ H2RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: UnknownPackaging: Cut Tape (CT)Datasheet:
Technical Details:
PackagingCut Tape (CT)
Package / Case16-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyGaNFET (Gallium Nitride)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C27A
Rds On (Max) @ Id, Vgs77mOhm @ 2.2A, 12V
FET Feature-
Power Dissipation (Max)-
Vgs(th) (Max) @ Id4.2V @ 10mA
Supplier Device Package16-DFN (8x8)
Grade-
Drive Voltage (Max Rds On, Min Rds On)12V
Vgs (Max)+20V, -1V
Drain to Source Voltage (Vdss)650 V
Gate Charge (Qg) (Max) @ Vgs4 nC @ 12 V
Qualification-

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