CGD65A055SH2
650V GAN HEMT, 55MOHM, DFN8X8. WManufacturer: Cambridge GaN Devices
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Cambridge GaN Devices ICeGaN™ H2 series CGD65A055SH2 is a 650V P-Channel Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) with a drain-source on-resistance (Rds(on)) of 77mOhm at 2.2A and 12V Vgs. This device features a continuous drain current (Id) of 27A at 25°C and a gate charge (Qg) of 4nC at 12V Vgs. The CGD65A055SH2 is housed in a 16-DFN (8x8) package, designed for surface mounting. Its operating temperature range is -55°C to 150°C. This component is suitable for applications in power conversion, motor drives, and industrial power supplies.
Additional Information
Series: ICeGaN™ H2RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 16-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 27A |
| Rds On (Max) @ Id, Vgs | 77mOhm @ 2.2A, 12V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 4.2V @ 10mA |
| Supplier Device Package | 16-DFN (8x8) |
| Grade | - |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Vgs (Max) | +20V, -1V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 4 nC @ 12 V |
| Qualification | - |
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