ATF-531P8-TR2
RF MOSFET E-PHEMT 4V 8LPCCManufacturer: Broadcom Limited
Categories: RF FETs, MOSFETs
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Broadcom Limited ATF-531P8-TR2 is a high-performance RF MOSFET utilizing E-pHEMT technology. This component is supplied in an 8-LPCC (2x2) package presented on tape and reel. Optimized for RF applications, it operates with a test voltage of 4V and a rated voltage of 7V, delivering a typical gain of 20dB at 2GHz. The device exhibits a noise figure of 0.6dB and offers an output power of 24.5dBm at 2GHz with a test current of 135mA. Its robust design makes it suitable for applications within the wireless infrastructure and aerospace/defense sectors. The ATF-531P8-TR2 is characterized by its excellent linearity and low noise performance at microwave frequencies.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-WFDFN Exposed Pad |
| Current Rating (Amps) | 300mA |
| Frequency | 2GHz |
| Power - Output | 24.5dBm |
| Gain | 20dB |
| Technology | E-pHEMT |
| Noise Figure | 0.6dB |
| Supplier Device Package | 8-LPCC (2x2) |
| Voltage - Rated | 7 V |
| Voltage - Test | 4 V |
| Current - Test | 135 mA |
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