AT-64020
RF TRANS NPN 20V 200SMDManufacturer: Broadcom Limited
Categories: Bipolar RF Transistors
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Broadcom Limited AT-64020 is an NPN bipolar RF transistor designed for demanding applications. This surface-mount component offers a 20V collector-emitter breakdown voltage and a maximum collector current of 200mA. With a power dissipation capability of 3W and a minimum DC current gain (hFE) of 20 at 110mA and 8V, it is suitable for robust RF amplification and switching tasks. The transistor operates at high junction temperatures, up to 200°C. Its 4-SMD (200 mil BeO) package is optimized for efficient thermal management in high-power RF designs. The AT-64020 finds application in various wireless communication systems and RF power amplifier circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 4-SMD (200 mil BeO) |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 200°C (TJ) |
| Gain | - |
| Power - Max | 3W |
| Current - Collector (Ic) (Max) | 200mA |
| Voltage - Collector Emitter Breakdown (Max) | 20V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 110mA, 8V |
| Frequency - Transition | - |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | - |
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