AT-64000-GP4
RF TRANS NPN 20V BIPOLAR CHIPManufacturer: Broadcom Limited
Categories: Bipolar RF Transistors
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Broadcom Limited AT-64000-GP4 is an NPN bipolar RF transistor designed for high-performance applications. This surface mount component delivers 3W of power with a collector current capability of 200mA and a collector-emitter breakdown voltage of 20V. It features a minimum DC current gain (hFE) of 20 at 110mA and 8V. The operating junction temperature reaches up to 200°C, ensuring reliability in demanding environments. This transistor is commonly utilized in telecommunications infrastructure, satellite communications, and aerospace applications where robust RF performance is critical. The AT-64000-GP4 is supplied in a die package.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 200°C (TJ) |
| Gain | - |
| Power - Max | 3W |
| Current - Collector (Ic) (Max) | 200mA |
| Voltage - Collector Emitter Breakdown (Max) | 20V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 110mA, 8V |
| Frequency - Transition | - |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | - |
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