AT-42035G
RF TRANS NPN 12V 8GHZ 35 MICRO XManufacturer: Broadcom Limited
Categories: Bipolar RF Transistors
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Broadcom Limited AT-42035G is an NPN bipolar RF transistor designed for demanding wireless applications. This surface-mount component operates with a collector-emitter breakdown voltage of 12V and a maximum collector current of 80mA. It exhibits a transition frequency of 8GHz, making it suitable for high-frequency signal amplification. The device offers a typical gain range of 10dB to 13.5dB and a noise figure of 2dB to 3dB at frequencies between 2GHz and 4GHz. With a maximum power dissipation of 600mW and an operating junction temperature of 150°C, it is built for reliability in challenging environments. The AT-42035G is packaged in a 4-SMD 35 micro-X case, commonly utilized in telecommunications and defense electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 4-SMD (35 micro-X) |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 10dB ~ 13.5dB |
| Power - Max | 600mW |
| Current - Collector (Ic) (Max) | 80mA |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 35mA, 8V |
| Frequency - Transition | 8GHz |
| Noise Figure (dB Typ @ f) | 2dB ~ 3dB @ 2GHz ~ 4GHz |
| Supplier Device Package | 35 micro-X |
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