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AT-42000-GP4

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AT-42000-GP4

RF TRANS NPN 12V 9GHZ CHIP

Manufacturer: Broadcom Limited

Categories: Bipolar RF Transistors

Quality Control: Learn More

Broadcom Limited AT-42000-GP4 is an NPN bipolar RF transistor designed for high-frequency applications. This surface mount component offers a 12V collector-emitter breakdown voltage and a maximum collector current of 80mA. It operates with a transition frequency of 9GHz, providing a typical gain of 10.5dB to 14dB. The transistor exhibits a minimum DC current gain (hFE) of 30 at 35mA and 8V. Its noise figure is rated at a typical 1.9dB to 3dB across the 2GHz to 4GHz frequency range. With a maximum power dissipation of 600mW and an operating junction temperature of up to 200°C, the AT-42000-GP4 is suitable for demanding RF circuitry. This component is commonly utilized in wireless infrastructure, radar systems, and satellite communications. It is supplied in tray packaging.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tray
Technical Details:
PackagingTray
Package / CaseDie
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature200°C (TJ)
Gain10.5dB ~ 14dB
Power - Max600mW
Current - Collector (Ic) (Max)80mA
Voltage - Collector Emitter Breakdown (Max)12V
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 35mA, 8V
Frequency - Transition9GHz
Noise Figure (dB Typ @ f)1.9dB ~ 3dB @ 2GHz ~ 4GHz
Supplier Device PackageChip

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