AT-42000-GP4
RF TRANS NPN 12V 9GHZ CHIPManufacturer: Broadcom Limited
Categories: Bipolar RF Transistors
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Broadcom Limited AT-42000-GP4 is an NPN bipolar RF transistor designed for high-frequency applications. This surface mount component offers a 12V collector-emitter breakdown voltage and a maximum collector current of 80mA. It operates with a transition frequency of 9GHz, providing a typical gain of 10.5dB to 14dB. The transistor exhibits a minimum DC current gain (hFE) of 30 at 35mA and 8V. Its noise figure is rated at a typical 1.9dB to 3dB across the 2GHz to 4GHz frequency range. With a maximum power dissipation of 600mW and an operating junction temperature of up to 200°C, the AT-42000-GP4 is suitable for demanding RF circuitry. This component is commonly utilized in wireless infrastructure, radar systems, and satellite communications. It is supplied in tray packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 200°C (TJ) |
| Gain | 10.5dB ~ 14dB |
| Power - Max | 600mW |
| Current - Collector (Ic) (Max) | 80mA |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 35mA, 8V |
| Frequency - Transition | 9GHz |
| Noise Figure (dB Typ @ f) | 1.9dB ~ 3dB @ 2GHz ~ 4GHz |
| Supplier Device Package | Chip |
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