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AT-41535G

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AT-41535G

RF TRANS NPN 12V 8GHZ 35 MICRO X

Manufacturer: Broadcom Limited

Categories: Bipolar RF Transistors

Quality Control: Learn More

Broadcom Limited AT-41535G is an NPN bipolar RF transistor designed for high-frequency applications. This surface mount component, packaged in a 35 micro-X configuration, operates with a collector-emitter breakdown voltage of 12V and a maximum collector current of 60mA. It exhibits a transition frequency of 8GHz and offers a gain range between 10dB and 18dB. The noise figure is typically between 1.3dB and 3dB across the 1GHz to 4GHz frequency spectrum. With a maximum power dissipation of 500mW and an operating junction temperature of 150°C, the AT-41535G is suitable for use in wireless communications and other RF circuitry.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / Case4-SMD (35 micro-X)
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature150°C (TJ)
Gain10dB ~ 18dB
Power - Max500mW
Current - Collector (Ic) (Max)60mA
Voltage - Collector Emitter Breakdown (Max)12V
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 10mA, 8V
Frequency - Transition8GHz
Noise Figure (dB Typ @ f)1.3dB ~ 3dB @ 1GHz ~ 4GHz
Supplier Device Package35 micro-X

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