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AT-41532-TR1G

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AT-41532-TR1G

RF TRANS NPN 12V SC70-3

Manufacturer: Broadcom Limited

Categories: Bipolar RF Transistors

Quality Control: Learn More

Broadcom Limited NPN RF Transistor, AT-41532-TR1G. This surface-mount bipolar RF transistor features a 12V collector-emitter breakdown voltage and a maximum collector current of 50mA. It is rated for 225mW maximum power dissipation. The device offers a gain range of 9dB to 15.5dB and a typical noise figure between 1dB and 1.9dB across a frequency range of 900MHz to 2.4GHz. The minimum DC current gain (hFE) is 30 at 5mA collector current and 5V collector-emitter voltage. The AT-41532-TR1G is supplied in an SC-70-3 package on tape and reel, suitable for operation up to 150°C junction temperature. This component is commonly utilized in wireless infrastructure and mobile device applications.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-70, SOT-323
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature150°C (TJ)
Gain9dB ~ 15.5dB
Power - Max225mW
Current - Collector (Ic) (Max)50mA
Voltage - Collector Emitter Breakdown (Max)12V
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 5mA, 5V
Frequency - Transition-
Noise Figure (dB Typ @ f)1dB ~ 1.9dB @ 900MHz ~ 2.4GHz
Supplier Device PackageSC-70-3

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