Home

Products

Discrete Semiconductor Products

Transistors

Bipolar (BJT)

Bipolar RF Transistors

AT-41511-TR1G

Banner
productimage

AT-41511-TR1G

RF TRANS NPN 12V SOT143

Manufacturer: Broadcom Limited

Categories: Bipolar RF Transistors

Quality Control: Learn More

Broadcom Limited AT-41511-TR1G is an NPN bipolar RF transistor designed for high-frequency applications. This SOT-143 packaged component offers a collector-emitter breakdown voltage of 12V and a maximum collector current of 50mA, with a power dissipation rating of 225mW. Key performance characteristics include a minimum DC current gain (hFE) of 30 at 5mA and 5V, and a gain range of 11dB to 15.5dB. The noise figure is typically between 1dB and 1.7dB across the 900MHz to 2.4GHz frequency range. Operating temperature extends up to 150°C (TJ). This device is supplied in Tape & Reel packaging. Its specifications make it suitable for use in wireless communication systems, mobile infrastructure, and other RF front-end designs.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-253-4, TO-253AA
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature150°C (TJ)
Gain11dB ~ 15.5dB
Power - Max225mW
Current - Collector (Ic) (Max)50mA
Voltage - Collector Emitter Breakdown (Max)12V
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 5mA, 5V
Frequency - Transition-
Noise Figure (dB Typ @ f)1dB ~ 1.7dB @ 900MHz ~ 2.4GHz
Supplier Device PackageSOT-143

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
AT-31011-TR2G

RF TRANS NPN 5.5V SOT143

product image
AT-32032-BLKG

RF TRANS NPN 5.5V SC70-3

product image
AT-32063-TR1G

RF TRANS 2 NPN 5.5V SOT363