AT-41500-GP4
RF TRANS NPN 12V 8GHZ DIEManufacturer: Broadcom Limited
Categories: Bipolar RF Transistors
Quality Control: Learn More
Broadcom Limited AT-41500-GP4 is an NPN bipolar RF transistor supplied as a die for surface mount applications. This component is designed for high-frequency operation with a transition frequency of 8GHz. It features a maximum collector current of 60mA and a collector-emitter breakdown voltage of 12V, supporting up to 500mW of power dissipation. The transistor exhibits a typical DC current gain (hFE) of 30 at 10mA and 8V, with a gain range of 8dB to 17dB. The noise figure is rated at a typical 1.4dB to 3dB across the 1GHz to 4GHz frequency range. The AT-41500-GP4 is suitable for demanding applications operating at elevated temperatures, with a junction temperature rating of 200°C. This device is commonly utilized in wireless infrastructure, satellite communications, and defense systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 200°C (TJ) |
| Gain | 8dB ~ 17dB |
| Power - Max | 500mW |
| Current - Collector (Ic) (Max) | 60mA |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 10mA, 8V |
| Frequency - Transition | 8GHz |
| Noise Figure (dB Typ @ f) | 1.4dB ~ 3dB @ 1GHz ~ 4GHz |
| Supplier Device Package | Die |
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