AT-41435G
RF TRANS NPN 12V 8GHZ 35 MICRO XManufacturer: Broadcom Limited
Categories: Bipolar RF Transistors
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Broadcom Limited AT-41435G is an NPN bipolar RF transistor designed for high-frequency applications. This surface mount component operates with a Collector-Emitter Breakdown Voltage of 12V and a maximum Collector Current (Ic) of 60mA. It features a Transition Frequency of 8GHz and provides a gain ranging from 10dB to 18.5dB. The noise figure is typically 1.3dB to 3dB across a frequency range of 1GHz to 4GHz. With a maximum power dissipation of 500mW and an operating junction temperature of 150°C, the AT-41435G is suitable for demanding RF circuits. The device is supplied in a 35 micro-X package, commonly referred to as 4-SMD, and is available in Bulk packaging. This transistor is utilized in various industries including telecommunications and wireless infrastructure.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 4-SMD (35 micro-X) |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 10dB ~ 18.5dB |
| Power - Max | 500mW |
| Current - Collector (Ic) (Max) | 60mA |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 10mA, 8V |
| Frequency - Transition | 8GHz |
| Noise Figure (dB Typ @ f) | 1.3dB ~ 3dB @ 1GHz ~ 4GHz |
| Supplier Device Package | 35 micro-X |
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