Home

Products

Discrete Semiconductor Products

Transistors

Bipolar (BJT)

Bipolar RF Transistors

AT-32063-TR1G

Banner
productimage

AT-32063-TR1G

RF TRANS 2 NPN 5.5V SOT363

Manufacturer: Broadcom Limited

Categories: Bipolar RF Transistors

Quality Control: Learn More

Broadcom Limited AT-32063-TR1G is a dual NPN RF transistor designed for high-frequency applications. This surface-mount component, packaged in a SOT-363 (6-TSSOP, SC-88) case, operates with a collector-emitter breakdown voltage of 5.5V and a maximum collector current of 32mA. It offers a typical gain range of 12.5dB to 14.5dB and a noise figure between 1.1dB and 1.4dB at 900MHz. The device features a minimum DC current gain (hFE) of 50 at 5mA, 2.7V. With a maximum power dissipation of 150mW, it is suitable for operation up to 150°C (TJ). This component is commonly utilized in wireless infrastructure and mobile communications. The AT-32063-TR1G is supplied on a Tape & Reel (TR) for automated assembly.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-TSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
Transistor Type2 NPN (Dual)
Operating Temperature150°C (TJ)
Gain12.5dB ~ 14.5dB
Power - Max150mW
Current - Collector (Ic) (Max)32mA
Voltage - Collector Emitter Breakdown (Max)5.5V
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 5mA, 2.7V
Frequency - Transition-
Noise Figure (dB Typ @ f)1.1dB ~ 1.4dB @ 900MHz
Supplier Device PackageSOT-363

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

By providing a telephone number and submitting the form, you are consenting to be contacted by SMS text message and agreeing to our Privacy Policy. Message frequency may vary. Message and data rates may apply. Reply STOP to opt out of further messaging. Reply HELP for more information.
Clients Also Buy