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AT-32011-TR2G

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AT-32011-TR2G

RF TRANS NPN 5.5V SOT143

Manufacturer: Broadcom Limited

Categories: Bipolar RF Transistors

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Broadcom Limited AT-32011-TR2G is an NPN bipolar RF transistor designed for high-frequency applications. This device operates with a 5.5V collector-emitter breakdown voltage and a maximum collector current of 32mA, dissipating up to 200mW of power. It features a minimum DC current gain (hFE) of 70 at 2mA and 2.7V. With a typical gain of 12.5dB to 14dB and a noise figure between 1dB and 1.3dB at 900MHz, the AT-32011-TR2G is suitable for demanding RF front-end circuitry. The transistor is housed in a compact SOT-143 surface mount package, supplied on tape and reel for automated assembly. Its robust construction allows for operation at temperatures up to 150°C (TJ). This component finds application in wireless communications infrastructure and consumer electronics where efficient RF amplification is critical.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-253-4, TO-253AA
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature150°C (TJ)
Gain12.5dB ~ 14dB
Power - Max200mW
Current - Collector (Ic) (Max)32mA
Voltage - Collector Emitter Breakdown (Max)5.5V
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 2mA, 2.7V
Frequency - Transition-
Noise Figure (dB Typ @ f)1dB ~ 1.3dB @ 900MHz
Supplier Device PackageSOT-143

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