TIPL760B-S
TRANS NPN 1100V 4A TO220Manufacturer: Bourns Inc.
Categories: Single Bipolar Transistors
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Bourns Inc. NPN Bipolar Junction Transistor (BJT), part number TIPL760B-S, offers robust performance for demanding applications. This through-hole component, packaged in a TO-220-3 configuration, features a maximum collector current (Ic) of 4 A and a significant collector-emitter breakdown voltage (Vce) of 1100 V. With a maximum power dissipation of 75 W and a collector saturation voltage (Vce Sat) of 1V at 400mA and 2A, it is suitable for high-voltage switching and power amplification tasks. The minimum DC current gain (hFE) is rated at 20 @ 500mA, 5V. Operating across a wide temperature range from -65°C to 150°C, this transistor finds utility in industrial automation, power supplies, and telecommunications equipment.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 400mA, 2A |
| Current - Collector Cutoff (Max) | 50µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 500mA, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-220 |
| Current - Collector (Ic) (Max) | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 1100 V |
| Power - Max | 75 W |
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