BDT60B-S
TRANS PNP DARL 100V 4A TO220Manufacturer: Bourns Inc.
Categories: Single Bipolar Transistors
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Bourns Inc. BDT60B-S is a PNP Darlington bipolar transistor designed for robust power applications. This through-hole component features a 100V collector-emitter breakdown voltage and a continuous collector current rating of 4A, with a maximum power dissipation of 2W. The device exhibits a minimum DC current gain (hFE) of 750 at 1.5A and 3V, and a saturation voltage (Vce) of 2.5V at 6mA collector current and 1.5A collector current. The collector cutoff current is specified at a maximum of 500µA. Packaged in a standard TO-220-3 configuration, the BDT60B-S is suitable for use in industrial control, power management, and general-purpose amplification circuits. It operates within a temperature range of -65°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP - Darlington |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2.5V @ 6mA, 1.5A |
| Current - Collector Cutoff (Max) | 500µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 1.5A, 3V |
| Frequency - Transition | - |
| Supplier Device Package | TO-220 |
| Current - Collector (Ic) (Max) | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 2 W |
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