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BD745C-S

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BD745C-S

TRANS NPN 110V 20A SOT93

Manufacturer: Bourns Inc.

Categories: Single Bipolar Transistors

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Bourns Inc. BD745C-S is a through-hole mounted NPN Bipolar Junction Transistor (BJT) housed in a SOT-93 (TO-218-3) package. This component offers a maximum collector-emitter breakdown voltage of 110 V and can handle a continuous collector current of up to 20 A. The device features a power dissipation rating of 3.5 W and a minimum DC current gain (hFE) of 20 at 5 A collector current and 4 V collector-emitter voltage. The saturation voltage at 5 A collector current and 2 A base current is specified at 3 V. The operating temperature range for the BD745C-S is -65°C to 150°C. This transistor is suitable for applications in power switching and amplification within industrial and consumer electronics.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-218-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic3V @ 5A, 20A
Current - Collector Cutoff (Max)100µA
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 5A, 4V
Frequency - Transition-
Supplier Device PackageSOT-93
Current - Collector (Ic) (Max)20 A
Voltage - Collector Emitter Breakdown (Max)110 V
Power - Max3.5 W

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