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BD652-S

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BD652-S

TRANS PNP DARL 120V 8A TO220

Manufacturer: Bourns Inc.

Categories: Single Bipolar Transistors

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Bourns Inc. BD652-S is a PNP Darlington bipolar junction transistor (BJT) designed for power switching applications. This component features a collector-emitter breakdown voltage (Vce) of 120V and a continuous collector current (Ic) capability of 8A, with a maximum power dissipation of 2W. The BD652-S exhibits a minimum DC current gain (hFE) of 750 at 3A and 3V. Its saturation voltage (Vce Sat) is specified at a maximum of 2.5V for a base current of 50mA and collector current of 5A. The device is housed in a TO-220-3 package for through-hole mounting and operates within an industrial temperature range of -65°C to 150°C. This transistor is commonly utilized in power supply regulation, motor control, and general switching circuits within industrial and automotive sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Transistor TypePNP - Darlington
Operating Temperature-65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic2.5V @ 50mA, 5A
Current - Collector Cutoff (Max)500µA
DC Current Gain (hFE) (Min) @ Ic, Vce750 @ 3A, 3V
Frequency - Transition-
Supplier Device PackageTO-220
Current - Collector (Ic) (Max)8 A
Voltage - Collector Emitter Breakdown (Max)120 V
Power - Max2 W

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