BD649-S
TRANS NPN DARL 100V 8A TO220Manufacturer: Bourns Inc.
Categories: Single Bipolar Transistors
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Bourns Inc. BD649-S is an NPN Darlington bipolar junction transistor (BJT) designed for high current applications. This component features a maximum collector current (Ic) of 8 A and a collector-emitter breakdown voltage (Vce) of 100 V. The BD649-S exhibits a minimum DC current gain (hFE) of 750 at 3 A and 3 V, signifying robust amplification capabilities. Its saturation voltage (Vce Sat) is a maximum of 2.5 V at 50 mA base current and 5 A collector current. With a maximum power dissipation of 2 W, it is suitable for power management and switching circuits. The transistor is housed in a TO-220-3 package, facilitating through-hole mounting. Operating temperature ranges from -65°C to 150°C. This device is commonly utilized in industrial automation, power supplies, and motor control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Darlington |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2.5V @ 50mA, 5A |
| Current - Collector Cutoff (Max) | 500µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 3A, 3V |
| Frequency - Transition | - |
| Supplier Device Package | TO-220 |
| Current - Collector (Ic) (Max) | 8 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 2 W |
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