Home

Products

Discrete Semiconductor Products

Transistors

Bipolar (BJT)

Single Bipolar Transistors

BD646-S

Banner
productimage

BD646-S

TRANS PNP DARL 60V 8A TO220

Manufacturer: Bourns Inc.

Categories: Single Bipolar Transistors

Quality Control: Learn More

Bourns Inc. BD646-S is a PNP Darlington bipolar junction transistor (BJT) designed for high current applications. This component offers a collector-emitter breakdown voltage of 60V and a continuous collector current capability of up to 8A. Featuring a minimum DC current gain (hFE) of 750 at 3A and 3V, it ensures substantial amplification. The transistor is housed in a TO-220-3 package, suitable for through-hole mounting, and has a maximum power dissipation of 2W. Its collector cutoff current is specified at a maximum of 500µA. The Vce saturation voltage is a maximum of 2.5V at 50mA base current and 5A collector current. The operating temperature range is from -65°C to 150°C. This device is commonly utilized in power switching and amplification circuits across various industrial and consumer electronics sectors. Packaging is provided in tubes.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Transistor TypePNP - Darlington
Operating Temperature-65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic2.5V @ 50mA, 5A
Current - Collector Cutoff (Max)500µA
DC Current Gain (hFE) (Min) @ Ic, Vce750 @ 3A, 3V
Frequency - Transition-
Supplier Device PackageTO-220
Current - Collector (Ic) (Max)8 A
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max2 W

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
BD652-S

TRANS PNP DARL 120V 8A TO220

product image
BD745C-S

TRANS NPN 110V 20A SOT93

product image
BD746C-S

TRANS PNP 100V 20A SOT93