BD545B-S
TRANS NPN 80V 15A SOT93Manufacturer: Bourns Inc.
Categories: Single Bipolar Transistors
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Bourns Inc. BD545B-S is an NPN bipolar junction transistor (BJT) designed for robust power applications. This component features a 80 V collector-emitter breakdown voltage (Vce) and can handle a continuous collector current (Ic) of up to 15 A. With a maximum power dissipation of 3.5 W, it is suitable for through-hole mounting within a TO-218-3 (SOT-93) package. Key electrical characteristics include a minimum DC current gain (hFE) of 10 at 10 A and 4 V, and a saturation voltage (Vce(sat)) of 1 V at 2 A collector current and the corresponding base current. The operating temperature range for the BD545B-S is -65°C to 150°C. This transistor finds utility in power switching and amplification circuits across various industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-218-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 2A, 10A |
| Current - Collector Cutoff (Max) | 700µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 10A, 4V |
| Frequency - Transition | - |
| Supplier Device Package | SOT-93 |
| Current - Collector (Ic) (Max) | 15 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 3.5 W |
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