BD540B-S
TRANS PNP 80V 5A TO220Manufacturer: Bourns Inc.
Categories: Single Bipolar Transistors
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Bourns Inc. BD540B-S is a PNP bipolar junction transistor (BJT) designed for demanding applications. This component features a maximum collector current (Ic) of 5A and a collector-emitter breakdown voltage (Vce) of 80V, making it suitable for power switching and amplification tasks. The device offers a minimum DC current gain (hFE) of 12 at 3A collector current and 4V collector-emitter voltage. With a maximum power dissipation of 2W, it is packaged in a standard TO-220-3 through-hole configuration for robust mounting. The Bourns Inc. BD540B-S exhibits a Vce(sat) of 1.5V at 1A base current and 5A collector current. It operates within a temperature range of -65°C to 150°C (TJ). This transistor finds application in industrial automation, power management, and general-purpose amplification circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 1A, 5A |
| Current - Collector Cutoff (Max) | 300µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 12 @ 3A, 4V |
| Frequency - Transition | - |
| Supplier Device Package | TO-220 |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 2 W |
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