BD539B-S
TRANS NPN 80V 5A TO220Manufacturer: Bourns Inc.
Categories: Single Bipolar Transistors
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Bourns Inc. BD539B-S is a bipolar junction transistor (BJT) with an NPN configuration. This device features a collector-emitter breakdown voltage of 80V and a continuous collector current capability of 5A, with a maximum power dissipation of 2W. The minimum DC current gain (hFE) is 12 at 3A collector current and 4V collector-emitter voltage. Collector cutoff current is specified at a maximum of 300µA. The saturation voltage (Vce(sat)) at 1A base current and 5A collector current is a maximum of 1.5V. This transistor is housed in a TO-220-3 package, designed for through-hole mounting. It operates within a temperature range of -65°C to 150°C (TJ). The BD539B-S is suitable for applications in industrial control, power switching, and general-purpose amplification.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 1A, 5A |
| Current - Collector Cutoff (Max) | 300µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 12 @ 3A, 4V |
| Frequency - Transition | - |
| Supplier Device Package | TO-220 |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 2 W |
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