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BD539-S

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BD539-S

TRANS NPN 40V 5A TO220

Manufacturer: Bourns Inc.

Categories: Single Bipolar Transistors

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Bourns Inc. BD539-S is an NPN bipolar junction transistor (BJT) designed for power switching and amplification applications. This through-hole component, housed in a TO-220 package, offers a collector-emitter breakdown voltage of 40V and a maximum continuous collector current of 5A. The device features a power dissipation capability of 2W and a minimum DC current gain (hFE) of 12 at 3A collector current and 4V collector-emitter voltage. Its saturation voltage (Vce(sat)) is rated at a maximum of 1.5V at 1A base current and 5A collector current. The BD539-S operates within an ambient temperature range of -65°C to 150°C. It finds application in various industrial and consumer electronics, including power supplies, motor control, and general-purpose amplification circuits.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.5V @ 1A, 5A
Current - Collector Cutoff (Max)300µA
DC Current Gain (hFE) (Min) @ Ic, Vce12 @ 3A, 4V
Frequency - Transition-
Supplier Device PackageTO-220
Current - Collector (Ic) (Max)5 A
Voltage - Collector Emitter Breakdown (Max)40 V
Power - Max2 W

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