BD250B-S
TRANS PNP 80V 25A SOT93Manufacturer: Bourns Inc.
Categories: Single Bipolar Transistors
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Bourns Inc. BD250B-S is a PNP Bipolar Junction Transistor (BJT) designed for demanding applications. This through-hole component features a maximum collector-emitter breakdown voltage of 80 V and a continuous collector current capability of 25 A. With a maximum power dissipation of 3 W and a low saturation voltage of 4 V @ 5 A, 25 A, it is well-suited for power switching and amplification tasks. The minimum DC current gain (hFE) is 10 at 15 A and 4 V. The device operates within an ambient temperature range of -65°C to 150°C. Packaged in a SOT-93 (TO-218-3) case, the BD250B-S is commonly found in industrial power control and automotive electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-218-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 4V @ 5A, 25A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 15A, 4V |
| Frequency - Transition | - |
| Supplier Device Package | SOT-93 |
| Current - Collector (Ic) (Max) | 25 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 3 W |
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