BD246B-S
TRANS PNP 80V 10A SOT93Manufacturer: Bourns Inc.
Categories: Single Bipolar Transistors
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The Bourns Inc. PNP Bipolar Junction Transistor, part number BD246B-S, is a robust component designed for demanding applications. This device features a maximum collector-emitter breakdown voltage of 80V and a continuous collector current capability of 10A, with a maximum power dissipation of 3W. The DC current gain (hFE) is a minimum of 20 at 3A collector current and 4V Vce. Its saturation voltage (Vce Sat) is a maximum of 4V at 2.5A base current and 10A collector current. The transistor is housed in a SOT-93 (TO-218-3) through-hole package, suitable for soldering and providing efficient thermal management. Operating temperature ranges from -65°C to 150°C. This component is commonly utilized in power switching, linear voltage regulation, and audio amplification circuits across various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-218-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 4V @ 2.5A, 10A |
| Current - Collector Cutoff (Max) | 700µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 3A, 4V |
| Frequency - Transition | - |
| Supplier Device Package | SOT-93 |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 3 W |
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