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BSS123

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BSS123

N-CHANNEL ENHANCEMENT MODE MOSFE

Manufacturer: ANBON SEMICONDUCTOR (INT'L) LIMITED

Categories: Single FETs, MOSFETs

Quality Control: Learn More

N-Channel 100 V 200mA (Ta) 350mW (Ta) Surface Mount SOT-23

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: Digi-Reel®
Technical Details:
PackagingDigi-Reel®
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C200mA (Ta)
Rds On (Max) @ Id, Vgs5Ohm @ 200mA, 10V
FET Feature-
Power Dissipation (Max)350mW (Ta)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackageSOT-23
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs1.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds14 pF @ 50 V

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