AS3401
P-CHANNEL ENHANCEMENT MODE MOSFEManufacturer: ANBON SEMICONDUCTOR (INT'L) LIMITED
Categories: Single FETs, MOSFETs
Quality Control: Learn More
P-Channel 30 V 4.4A (Ta) 1.2W (Ta) Surface Mount SOT-23
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 4 week(s)Product Status: ActivePackaging: Cut Tape (CT)Download Free CAD Model:%20LIMITED&mpn=AS3401&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.4A (Ta) |
| Rds On (Max) @ Id, Vgs | 55mOhm @ 4.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.2W (Ta) |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |
| Supplier Device Package | SOT-23 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 680 pF @ 15 V |
Request a Quote
Clients Also Buy
AS1M040120T
N-CHANNEL SILICON CARBIDE POWER
AS1M025120P
N-CHANNEL SILICON CARBIDE POWER
AS1M025120T
N-CHANNEL SILICON CARBIDE POWER
