AS2M040120P
N-CHANNEL SILICON CARBIDE POWERManufacturer: ANBON SEMICONDUCTOR (INT'L) LIMITED
Categories: Single FETs, MOSFETs
Quality Control: Learn More
N-Channel 1200 V 60A (Tc) 330W (Tc) Through Hole TO-247-3
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 4 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:%20LIMITED&mpn=AS2M040120P&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 55mOhm @ 40A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 330W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 10mA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Vgs (Max) | +25V, -10V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 142 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2946 pF @ 1000 V |
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