AMTP65H150G4LSGB
GAN FET N-CH 650V 13A DFN8X8Manufacturer: Analog Power Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
N-Channel 650 V 13A (Tc) 52W (Tc) Surface Mount 4-DFN (8x8)
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 4-PowerTSFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 52W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 4-DFN (8x8) |
| Grade | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±18V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.8 nC @ 6 V |
| Input Capacitance (Ciss) (Max) @ Vds | 760 pF @ 400 V |
| Qualification | - |
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