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AMC3M0040120D

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AMC3M0040120D

SICFET N-CH 1200V 15A TO-247

Manufacturer: Analog Power Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Analog Power Inc. AMC3M0040120D is an N-Channel SiCFET designed for high-power applications. This component features a continuous drain current (Id) of 15A at 25°C and a maximum power dissipation of 500W, with a breakdown voltage of 1200V. The Rds On is specified at a maximum of 40mOhm at 5A and 10V. It is housed in a TO-247-3 through-hole package, suitable for demanding thermal management. The device operates within a temperature range of -55°C to 155°C (TJ). Drive voltage requirements range from 15V to 20V, with a maximum gate-source voltage (Vgs) of ±25V and a threshold voltage (Vgs(th)) of 2V (min) at 250µA. This SiCFET is utilized in sectors such as industrial power supplies, electric vehicle charging, and renewable energy systems.

Additional Information

Series: -RoHS Status: Request inventory verificationManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 155°C (TJ)
TechnologySiCFET (Silicon Carbide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C15A (Tc)
Rds On (Max) @ Id, Vgs40mOhm @ 5A, 10V
Power Dissipation (Max)500W (Tc)
Vgs(th) (Max) @ Id2V @ 250µA (Min)
Supplier Device PackageTO-247
Drive Voltage (Max Rds On, Min Rds On)15V, 20V
Vgs (Max)±25V

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