DS1270Y-IND
Non-Volatile SRAM Module, 2MX8, 70ns, CMOS, PDIP36Manufacturer: Analog Devices Inc.
Categories: SRAMs
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Analog Devices Inc. DS1270Y-IND is a 2M x 8 Non-Volatile SRAM module operating at 70ns access times. This CMOS component, identified by the DS1270 series, offers 5 years of data retention and utilizes a 36-pin PDIP package for through-hole mounting. With a memory organization of 2M words by 8 bits, it provides 16,777,216 bits of storage. The module operates asynchronously with a supply voltage range of 4.5V to 5.5V and maintains functionality across an industrial temperature range of -40°C to +85°C. This component is suitable for applications requiring persistent data storage in industrial automation, telecommunications, and embedded systems.
Additional Information
Series: DS1270RoHS Status: Manufacturer Lead Time: Product Status: ActivePackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Time_Max | 70.0000000000000000 |
| Additional_Feature | 5 YEARS OF DATA RETENTION PERIOD |
| JESD_30_Code | R-PDIP-T36 |
| Memory_Density | 16777216.0000000000000000 |
| Memory_IC_Type | NON-VOLATILE SRAM MODULE |
| Memory_Organization | 2MX8 |
| Memory_Width | 8 |
| Number_of_Functions | 1 |
| Number_of_Terminals | 36 |
| Number_of_Words | 2097152.0000000000000000 |
| Number_of_Words_Code | 2M |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 85.0 |
| Operating_Temperature_Min | -40.0 |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | DIP |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Parallel_Serial | Parallel |
| Supply_Voltage_Max | 5.50000 |
| Supply_Voltage_Min | 4.50000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Position | Dual |
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