DS1270AB-IND
Non-Volatile SRAM Module, 2MX8, 70ns, CMOS, PDIP36Manufacturer: Analog Devices Inc.
Categories: SRAMs
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Analog Devices Inc. DS1270AB-IND is a 2M x 8 non-volatile SRAM module featuring a 70ns asynchronous access time. This CMOS component provides 5 years of data retention, ensuring data integrity without external power. It operates within a commercial temperature range of -40°C to +85°C and utilizes a 5V supply voltage (4.75V to 5.25V). The DS1270AB-IND is housed in a 36-pin PDIP (R-PDIP-T36) package with through-hole terminals. Key applications include industrial control, data logging, and embedded systems requiring persistent memory storage. The memory organization is 2M words by 8 bits, offering a total density of 16 Mbit.
Additional Information
Series: DS1270RoHS Status: Manufacturer Lead Time: Product Status: ActivePackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Time_Max | 70.0000000000000000 |
| Additional_Feature | 5 YEARS OF DATA RETENTION PERIOD |
| JESD_30_Code | R-PDIP-T36 |
| Memory_Density | 16777216.0000000000000000 |
| Memory_IC_Type | NON-VOLATILE SRAM MODULE |
| Memory_Organization | 2MX8 |
| Memory_Width | 8 |
| Number_of_Functions | 1 |
| Number_of_Terminals | 36 |
| Number_of_Words | 2097152.0000000000000000 |
| Number_of_Words_Code | 2M |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 85.0 |
| Operating_Temperature_Min | -40.0 |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | DIP |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Parallel_Serial | Parallel |
| Supply_Voltage_Max | 5.25000 |
| Supply_Voltage_Min | 4.75000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Position | Dual |
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