DS1250Y-IND
Non-Volatile SRAM Module, 512KX8, 70ns, CMOSManufacturer: Analog Devices Inc.
Categories: SRAMs
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Analog Devices Inc. DS1250Y-IND is a non-volatile SRAM module featuring 512K x 8 memory organization and 70ns access time. This CMOS component provides 4Mbit of memory density, equivalent to 524,288 words. Designed for robust operation, it offers a 10-year data retention period, ensuring data integrity over extended periods. Operating within a temperature range of -40°C to +85°C and a supply voltage of 4.5V to 5.5V, this asynchronous parallel memory module is suitable for demanding applications. Its microelectronic assembly package is designed for reliability in industrial and other critical systems.
Additional Information
Series: DS1250RoHS Status: Manufacturer Lead Time: Product Status: ActivePackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Time_Max | 70.0000000000000000 |
| Additional_Feature | 10 YEARS OF DATA RETENTION PERIOD |
| JESD_30_Code | R-XDMA-N32 |
| Memory_Density | 4194304.0000000000000000 |
| Memory_IC_Type | NON-VOLATILE SRAM MODULE |
| Memory_Organization | 512KX8 |
| Memory_Width | 8 |
| Number_of_Functions | 1 |
| Number_of_Terminals | 32 |
| Number_of_Words | 524288.0000000000000000 |
| Number_of_Words_Code | 512k |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 85.0 |
| Operating_Temperature_Min | -40.0 |
| Package_Body_Material | UNSPECIFIED |
| Package_Shape | Rectangular |
| Package_Style | MICROELECTRONIC ASSEMBLY |
| Parallel_Serial | Parallel |
| Supply_Voltage_Max | 5.50000 |
| Supply_Voltage_Min | 4.50000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | NO LEAD |
| Terminal_Position | Dual |
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