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DS1230WP-100IND+

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DS1230WP-100IND+

Non-Volatile SRAM Module, 256KX8, 100ns, CMOS

Manufacturer: Analog Devices Inc.

Categories: SRAMs

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The Analog Devices Inc. DS1230WP-100IND- is a non-volatile SRAM module from the DS1230 series. This CMOS component offers a 256K x 8 memory organization with a maximum access time of 100ns. It provides a substantial 2097152-bit memory density, equivalent to 262,144 words. A key feature is its 10-year data retention capability, ensuring long-term data integrity. Operating in an asynchronous mode, this module supports a parallel interface and is designed for industrial applications with an operating temperature range of -40°C to +85°C. The module requires a supply voltage between 3.0V and 3.6V, with a typical operating current of 50mA and a standby current of 250µA. Its form factor is a 34-lead microelectronic assembly with pin terminals. This component is suitable for applications in industrial control, data logging, and communication systems where persistent data storage is critical.

Additional Information

Series: DS1230RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: ActivePackaging: Datasheet:
Technical Details:
Length25.0190
Width23.4950
TechnologyCMOS
Access_Time_Max100.0000000000000000
Additional_Feature10 YEAR DATA RETENTION
JESD_30_CodeR-XDMA-P34
Memory_Density2097152.0000000000000000
Memory_IC_TypeNON-VOLATILE SRAM MODULE
Memory_Organization256KX8
Memory_Width8
Number_of_Functions1
Number_of_Terminals34
Number_of_Words262144.0000000000000000
Number_of_Words_Code256k
Operating_ModeAsynchronous
Operating_Temperature_Max85.0
Operating_Temperature_Min-40.0
Package_Body_MaterialUNSPECIFIED
Package_Equivalence_CodeMODULE,34LEAD,1.0
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Parallel_SerialParallel
Standby_Current_Max0.000250000000000
Supply_Current_Max50.000000000000000
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountNo
Terminal_FormPIN/PEG
Terminal_Pitch1.270
Terminal_PositionDual

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