DS1230AB-200IND+
Non-Volatile SRAM Module, 32KX8, 200ns, CMOSManufacturer: Analog Devices Inc.
Categories: SRAMs
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Analog Devices Inc. DS1230AB-200IND- is a 32K x 8 non-volatile SRAM module with a 200ns access time, built on CMOS technology. This asynchronous parallel memory offers a total density of 262,144 bits and operates from a 4.75V to 5.25V supply voltage range. The module maintains data integrity without external power, ideal for applications requiring persistent data storage in industrial and automotive environments. It features a standard 28-pin DIP package with a 2.54mm terminal pitch. The DS1230 series is designed for robust performance and data retention in challenging operational conditions.
Additional Information
Series: DS1230RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: ActivePackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Time_Max | 200.0000000000000000 |
| JESD_30_Code | R-XDMA-P28 |
| Memory_Density | 262144.0000000000000000 |
| Memory_IC_Type | NON-VOLATILE SRAM MODULE |
| Memory_Organization | 32KX8 |
| Memory_Width | 8 |
| Number_of_Functions | 1 |
| Number_of_Terminals | 28 |
| Number_of_Words | 32768.0000000000000000 |
| Number_of_Words_Code | 32k |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 85.0 |
| Operating_Temperature_Min | -40.0 |
| Package_Body_Material | UNSPECIFIED |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP28,.6 |
| Package_Shape | Rectangular |
| Package_Style | MICROELECTRONIC ASSEMBLY |
| Parallel_Serial | Parallel |
| Standby_Current_Max | 0.000600000000000 |
| Supply_Current_Max | 85.000000000000000 |
| Supply_Voltage_Max | 5.25000 |
| Supply_Voltage_Min | 4.75000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | PIN/PEG |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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