DS1200P
Non-Volatile SRAM, 128X8, CMOS, PDIP10Manufacturer: Analog Devices Inc.
Categories: SRAMs
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The Analog Devices Inc. DS1200P is a 128x8 non-volatile SRAM memory IC featuring CMOS technology. Housed in a 10-lead PDIP package with a 2.54mm terminal pitch, this component offers through-hole mounting. Its memory density is 1 kilobit, organized as 128 words of 8 bits each. The DS1200 series device operates over a temperature range of 0°C to 70°C, with a maximum supply current of 6mA and a standby current of 2.5µA. This component is suitable for applications requiring data retention in industrial and embedded systems.
Additional Information
Series: DS1200RoHS Status: Manufacturer Lead Time: Product Status: Active-UnconfirmedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| JESD_30_Code | R-PDIP-T10 |
| Memory_Density | 1024.0000000000000000 |
| Memory_IC_Type | NON-VOLATILE SRAM |
| Memory_Organization | 128X8 |
| Memory_Width | 8 |
| Number_of_Terminals | 10 |
| Number_of_Words | 128.0000000000000000 |
| Number_of_Words_Code | 128 |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | DIP |
| Package_Equivalence_Code | DIP10,.3 |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Standby_Current_Max | 0.002500000000000 |
| Supply_Current_Max | 6.000000000000000 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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