DS1270Y-100#
IC NVSRAM 16MBIT PARALLEL 36EDIPManufacturer: Analog Devices Inc./Maxim Integrated
Categories: Memory
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The Analog Devices Inc./Maxim Integrated DS1270Y-100- is a 16-Mbit Non-Volatile SRAM (NVSRAM) memory integrated circuit. This component features a parallel interface with an access time of 100 ns, organized as 2M x 8. The NVSRAM technology provides both high-speed read/write operations characteristic of SRAM and data retention without external power, utilizing an internal lithium energy source. The device operates within a voltage range of 4.5V to 5.5V. Supplied in a 36-EDIP package, it is designed for through-hole mounting. Typical applications for this memory solution include industrial control systems, data acquisition, and systems requiring persistent data storage in power-loss scenarios. The write cycle time for a word or page is 100 ns. The operating temperature range is 0°C to 70°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 36-DIP Module (0.610"", 15.49mm) |
| Mounting Type | Through Hole |
| Memory Size | 16Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Voltage - Supply | 4.5V ~ 5.5V |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Memory Format | NVSRAM |
| Supplier Device Package | 36-EDIP |
| Write Cycle Time - Word, Page | 100ns |
| Memory Interface | Parallel |
| Access Time | 100 ns |
| Memory Organization | 2M x 8 |
| Programmable | Not Verified |
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